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TMS46100 - DYNAMIC RANDOM-ACCESS MEMORIES

Download the TMS46100 datasheet PDF. This datasheet also includes the TMS44100 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (TMS44100-etcTI.pdf) that lists specifications for multiple related part numbers.

General Description

DGA PACKAGE ( TOP VIEW ) DJ PACKAGE ( TOP VIEW ) D W RAS NC A10 1 2 3 4 5 26 VSS 25 Q D1 W2 24 CAS RAS 3 23 NC NC 4 22 A9 A10 5 26 VSS 25 Q 24 CAS 23 NC 22 A9 A0 A1 A2 A3 VCC 9 10 11 12 13 18 A8 17 A7 16 A6 15 A5 14 A4 A0 A1 A2 A3 VCC 9 10 11 12 13 18 A8 17 A7 16 A6 15 A5 14 A4 PIN NOMENCLATURE A0 – A10 CAS D NC Q RAS W VCC VSS Address Inputs Column-Address Strobe Data In No Connection Data Out Row-Address Strobe Write Enable 5-V or 3.3-V Supply Ground The TMS4x100 series are high-speed, 4 194 304-bit dynamic random-access memories, organized as 4 194 304 words of one bit each.

The TMS4x100P series are high-speed, low-power, self-refresh with extended-refresh, 4 194 304-bit dynamic random-access memories, organized as 4 194 304 words of one bit each.

Both series employ state-of-the-art EPIC™ (Enhanced Performance Implanted CMOS) technology for high performance, reliability, and low voltage.

Overview

ADVANCE INFORMATION TMS44100, TMS44100P, TMS46100, TMS46100P 4194304-WORD BY 1-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMHS561A – MARCH 1995 – REVISED JUNE 1995 D Organization .

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