900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






etcTI

TMS464409 Datasheet Preview

TMS464409 Datasheet

DYNAMIC RANDOM-ACCESS MEMORIES

No Preview Available !

TMS464409, TMS464409P, TMS465409, TMS465409P
16 777 216 BY 4-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS895A – MAY 1997 – REVISED OCTOBER 1997
D Organization . . . 16777216 by 4 Bits
D Single 3.3-V Power Supply
(± 0.3-V Tolerance)
D Performance Ranges:
ACCESS ACCESS ACCESS EDO
TIME TIME TIME CYCLE
tRAC tCAC tAA tHPC
(MAX) (MAX) (MAX) (MIN)
’46x409/P-40 40 ns 11 ns 20 ns 16 ns
’46x409/P-50 50 ns 13 ns 25 ns 20 ns
’46x409/P-60 60 ns 15 ns 30 ns 25 ns
D Extended-Data-Out (EDO) Operation
D CAS-Before-RAS (CBR) Refresh
D Long Refresh Period (See Available
Options Table)
D Low-Power, Self-Refresh Version
(TMS46x409P)
D 3-State Unlatched Output
D All Inputs / Outputs and Clocks Are
Low-Voltage TTL (LVTTL) Compatible
D High-Reliability Plastic 32-Lead
400-Mil-Wide Thin Small-Outline (TSOP)
Package (DGC Suffix)
D Operating Free-Air Temperature Range
0°C to 70°C
DEVICE
AVAILABLE OPTIONS
SELF-REFRESH
BATTERY
BACKUP
RAS-ONLY
REFRESH
CYCLES
CBR
REFRESH
CYCLES
DGC PACKAGE
( TOP VIEW )
VCC
DQ1
DQ2
NC
NC
NC
NC
W
RAS
A0
A1
A2
A3
A4
A5
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 VSS
31 DQ4
30 DQ3
29 NC
28 NC
27 NC
26 CAS
25 OE
24 A12
23 A11
22 A10
21 A9
20 A8
19 A7
18 A6
17 VSS
A12 is NC for TMS465409 and TMS465409P.
PIN NOMENCLATURE
A0 – A12
CAS
DQ1 – DQ4
NC
OE
RAS
W
VCC
VSS
Address Inputs
Column-Address Strobe
Data In / Data Out
No Internal Connection
Output Enable
Row-Address Strobe
Write Enable
3.3-V Supply
Ground
TMS464409
— 8 192 in 64 ms 4 096 in 64 ms
TMS464409P
YES
8 192 in 128 ms 4 096 in 128 ms
TMS465409
— 4 096 in 64 ms 4 096 in 64 ms
TMS465409P
YES
4 096 in 128 ms 4 096 in 128 ms
description
The TMS464409 and TMS465409 series are low-voltage, 67 108 864-bit dynamic random-access memories
(DRAMs), organized as 16 777 216 words of 4 bits each. The TMS464409P and TMS465409P series are
high-speed, low-voltage, low-power, self-refresh, 67 108 864-bit DRAMs, organized as 16 777 216 words of
4 bits each. Both sets of devices employ state-of-the-art technology for high performance, reliability, and low
power.
These devices feature maximum RAS access times of 40, 50, and 60 ns. All inputs and outputs, including clocks,
are compatible with LVTTL. All addresses and data-in lines are latched on chip to simplify system design. Data
out is unlatched to allow greater system flexibility.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCT PREVIEW information concerns products in the formative or
design phase of development. Characteristic data and other
specifications are design goals. Texas Instruments reserves the right to
change or discontinue these products without notice.
Copyright © 1997, Texas Instruments Incorporated
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443
1




etcTI

TMS464409 Datasheet Preview

TMS464409 Datasheet

DYNAMIC RANDOM-ACCESS MEMORIES

No Preview Available !

TMS464409, TMS464409P, TMS465409, TMS465409P
16 777 216 BY 4-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS895A – MAY 1997 – REVISED OCTOBER 1997
description (continued)
The TMS46x409 and TMS46x409P series are offered in a 400-mil, 32-lead plastic surface mount TSOP
package (DGC suffix). This package is designed for operation from 0°C to 70°C.
logic symbol (TMS464409 and TMS464409P)
A0 10
A1 11
A2 12
A3 13
A4 14
A5 15
A6 18
A7 19
A8 20
A9 21
A10 22
A11 23
A12 24
RAS 9
CAS 26
W8
RAM 16M × 4
20D11/21D0
A
0
16777216
20D20/21D9
20D21/21D10
20D22/
20D23/
C20[ROW]
G23/[REFRESH ROW]
24[PWR DWN]
C21[COL]
G24
&
23C22
23,21D
24,25EN
OE 25
DQ1 2
DQ2 3
DQ3 30
DQ4 31
G25
A,22D
26
A,Z26
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
2 POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443


Part Number TMS464409
Description DYNAMIC RANDOM-ACCESS MEMORIES
Maker etcTI
Total Page 30 Pages
PDF Download

TMS464409 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 TMS464409 DYNAMIC RANDOM-ACCESS MEMORIES
etcTI
2 TMS464409P DYNAMIC RANDOM-ACCESS MEMORIES
etcTI





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy