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TMS465169P Datasheet Preview

TMS465169P Datasheet

DYNAMIC RANDOM-ACCESS MEMORIES

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D Organization . . . 4 194 304 by 16 Bits
D Single 3.3-V Power Supply (± 0.3 V
Tolerance)
D Performance Ranges:
ACCESS ACCESS ACCESS EDO
TIME TIME TIME CYCLE
tRAC tCAC
MAX MAX
tAA
MAX
tHPC
MIN
’46x169/P-50 50 ns 13 ns 25 ns 20 ns
’46x169/P-60 60 ns 15 ns 30 ns 25 ns
D Extended-Data-Out (EDO) Operation
D xCAS-Before-RAS ( xCBR) Refresh
D Long Refresh Period and Self-Refresh
Option ( TMS46x169P)
D 3-State Unlatched Output
D Low Power Dissipation
D High-Reliability Plastic 50-Lead
400-Mil-Wide Surface-Mount Thin
Small-Outline Package ( TSOP) (DGE Suffix)
D Operating Free-Air Temperature Range
0°C to 70°C
DEVICE
TMS465169
TMS465169P
AVAILABLE OPTIONS
POWER
SUPPLY
SELF-
REFRESH,
BATTERY
BACKUP
REFRESH
CYCLES
3.3 V
— 4 096 in 64 ms
3.3 V
Yes 4 096 in 128 ms
description
The and TMS465169 is a high-speed,
67 108 864-bit dynamic random-access memory
(DRAM) device organized as 4 194 304 words of
16 bits. The TMS465169P is similar DRAM but
includes a long refresh period and a self-refresh
option. Both employ state-of-the-art technology
for high performance, reliability, and low power at
low cost.
TMS465169, TMS465169P
4194304 BY 16ĆBIT EXTENDED DATA OUT
DYNAMIC RANDOMĆACCESS MEMORIES
SMHS566B − JUNE 1997 − REVISED APRIL 1998
DGE PACKAGE
( TOP VIEW )
VCC
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
NC
VCC
W
RAS
NC
NC
W
NC
A0
A1
A2
A3
A4
A5
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50 VSS
49 DQ15
48 DQ14
47 DQ13
46 DQ12
45 VSS
44 DQ11
43 DQ10
42 DQ9
41 DQ8
40 NC
39 VSS
38 LCAS
37 UCAS
36 OE
35 NC
34 NC
33 A12/NC
32 A11
31 A10
30 A9
29 A8
28 A7
27 A6
26 VSS
PIN NOMENCLATURE
A0 −A12†
DQ0 −DQ15
LCAS
UCAS
NC
OE
RAS
VCC
VSS
W
Address Inputs
Data In / Data Out
Lower Column-Address Strobe
Upper Column-Address Strobe
No Internal Connection
Output Enable
Row-Address Strobe
3.3-V Supply
Ground
Write Enable
A12 is NC for TMS465169 and TMS465169P.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1998, Texas Instruments Incorporated
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
1




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TMS465169P Datasheet Preview

TMS465169P Datasheet

DYNAMIC RANDOM-ACCESS MEMORIES

No Preview Available !

TMS465169, TMS465169P
4194304 BY 16ĆBIT EXTENDED DATA OUT
DYNAMIC RANDOMĆACCESS MEMORIES
SMHS566B − JUNE 1997 − REVISED APRIL 1998
description (continued)
These devices feature maximum RAS access times of 50 and 60 ns. All addresses and data-in lines are latched
on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.
The TMS465169/ P is offered in a 50-lead plastic surface-mount TSOP (DGE suffix). This package is designed
for operation from 0°C to 70°C.
2 POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443


Part Number TMS465169P
Description DYNAMIC RANDOM-ACCESS MEMORIES
Maker etcTI
Total Page 30 Pages
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