SLOS342A – DECEMBER 2000 – REVISED SEPTEMBER 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device
placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
THD+N when driving an 16-Ω load from 5 V is 0.03% at 1 kHz, and less than 1% across the audio band of 20 Hz
to 20 kHz. For 32-Ω loads, the THD+N is reduced to less than 0.02% at 1 kHz, and is less than 1% across the
audio band of 20 Hz to 20 kHz. For 10-kΩ loads, the THD+N performance is 0.005% at 1 kHz, and less than
0.5% across the audio band of 20 Hz to 20 kHz.
-40°C to 85°C
(1) The DGQ package isavailable in left-ended tape and reel only (e.g., TPA6112A2DGQR).
I Tap to voltage divider for internal mid-supply bias supply. Connect to a 0.1 µF to 1 µF low ESR capacitor
for best performance.
I GND is the ground connection.
I IN1- is the negative input for channel 1.
I IN1+ is the positive input for channel 1.
I IN2- is the negative input for channel 2.
I IN2+ is the positive input for channel 2.
I Puts the device in a low quiescent current mode when held high.
I VDD is the supply voltage terminal.
O VO1 is the audio output for channel 1.
O VO2 is the audio output for channel 2.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature (unless otherwise noted(1))
VDD Supply voltage
VI Input voltage
Continuous total power dissipation
TJ Operating junction temperature range
Tstg Storage temperature range
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
-0.3 V to VDD + 0.3 V
-40°C to 150°C
-65°C to 150°C
(1) Stresses beyond thoselisted under absolute maximum ratings may cause permanent damage to the device.These are stress ratings
only, and functional operation of the device at theseor any other conditions beyond those indicated under recommended
operatingconditions is not implied. Exposure to absolute-maximum-rated conditions forextended periods may affect device reliability.