TS3DS26227
Key Features
- 1 High-Bandwidth Data Paths - Up to 800 MHz
- Specified Break-Before-Make Switching
- Control Inputs Reference to VIO
- Low Charge Injection
- Excellent ON-State Resistance Matching
- Low Total Harmonic Distortion (THD)
- 2.3-V to 3.6-V Power Supply (V+)
- 1.65-V to 1.95-V Logic Supply (VIO)
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
Applications
- PDAs
