TS3USB221E Datasheet | Texas Instruments

Features - VCC operation of 2.3V to 3.6V - Switch I/OS accept signals up to 5.5V - 1.8V patible control-pin inputs - Low-power mode when OE is disabled (1μA) - r ON = 6Ω maximum - Δr ON = 0.2Ω typical - CIO(ON) = 7pf maximum - Low power consumption (30μA maximum) - ESD performance tested: - 7000V human body model per JEDEC JS-001 - 1000V charged-device model per JEDEC JS-002 - ESD performance I/O port to GND: - 12k V human body model (JEDEC JS-001) - ±7k V contact discharge (IEC 61000-4-2) - High bandwidth (1GHz typical) 2 Applications - Routes signals for USB 1.0, 1.1, and 2.0 - Mobile phones - Digital cameras - Notebooks - USB I/O expansion - MHL 1.0 D+ 1D+ D- 1D- 2D+ 2D- Digital Control Block Diagram 3 Description The TS3USB221E is a high-bandwidth switch specially designed for the switching of high-speed USB 2.0 signals in handset and consumer applications, such as cell phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (1GHz) of this switch allows signals to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. The TS3USB221E is designed for low bit-tobit skew and high channel-to-channel noise isolation, and is patible with various standards, such as high-speed USB 2.0 (480Mbps). The TS3USB221E integrates ESD protection cells on all pins, is available in a SON package (3mm × 3mm) as well as in a tiny μQFN package (2mm × 1.5mm) and is characterized over the free-air temperature range from - 40°C to 85°C. Package Information PART NUMBER PACKAGE(1)...