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UCC27517A-Q1
SLVSC88B – AUGUST 2013 – REVISED AUGUST 2015
UCC27517A-Q1 Single-Channel High-Speed Low-Side Gate Driver
with Negative Input Voltage Capability (with 4-A Peak Source and Sink)
1 Features
•1 Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
– Device Automotive Qualified Grade 1: –40°C
to 125°C Ambient Operating Temperature
Range
– Device HBM ESD Classification Level 2
– Device CDM ESD Classification Level C6
• Low-Cost Gate-Driver Device Offering Superior
Replacement of NPN and PNP Discrete Solutions
• 4-A Peak-Source and Sink Symmetrical Drive
• Ability to Handle Negative Voltages (–5 V) at
Inputs
• Fast Propagation Delays (13-ns typical)
• Fast Rise and Fall Times (9-ns and 7-ns typical)
• 4.5 to 18-V Single-Supply Range
• Outputs Held Low During VDD UVLO (ensures
glitch-free operation at power up and power down)
• TTL and CMOS Compatible Input-Logic Threshold
(independent of supply voltage)
• Hysteretic-Logic Thresholds for High-Noise
Immunity
• Dual Input Design (choice of an inverting (IN– pin)
or non-inverting (IN+ pin) driver configuration)
– Unused Input Pin can be Used for Enable or
Disable Function
• Output Held Low when Input Pins are Floating
• Input Pin Absolute Maximum Voltage Levels Not
Restricted by VDD Pin Bias Supply Voltage
• Operating Temperature Range of –40°C to 140°C
• 5-Pin DBV (SOT-23) Package Option
2 Applications
• Automotive
• Switch-Mode Power Supplies
• DC-to-DC Converters
• Companion Gate-Driver Devices for Digital-Power
Controllers
• Solar Power, Motor Control, UPS
• Gate Driver for Emerging Wide Band-Gap Power
Devices (such as GaN)
3 Description
The UCC27517A-Q1 single-channel high-speed low-
side gate-driver device effectively drives MOSFET
and IGBT power switches. With a design that
inherently minimizes shoot-through current, the
UCC27517A-Q1 sources and sinks high peak-current
pulses into capacitive loads offering rail-to-rail drive
capability and extremely small propagation delay
typically 13 ns.
The UCC27517A-Q1 device handles –5 V at input.
The UCC27517A-Q1 provides 4-A source and 4-A
sink (symmetrical drive) peak-drive current capability
at VDD = 12 V.
The UCC27517A-Q1 operates over a wide VDD range
of 4.5 V to 18 V and wide temperature range of
–40°C to 140°C. Internal Undervoltage Lockout
(UVLO) circuitry on VDD pin holds the output low
outside VDD operating range. The ability to operate at
low voltage levels such as below 5 V, along with
best-in-class switching characteristics, is especially
suited for driving emerging wide band-gap power-
switching devices such as GaN power-semiconductor
devices.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
UCC27517A-Q1
SOT-23 (5)
2.90 mm × 1.60 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Typical Applications Diagrams
Non-Inverting Input
4.5 V to 18 V
V+
C1
UCC27517A-Q1
1 VDD
OUT 5
R1
2 GND
Q1
IN+
3 IN+
IN- 4
4.5 V to 18 V
V+
C1
Inverting Input
UCC27517A-Q1
1 VDD
OUT 5
R1
2 GND
3 IN+
IN- 4
VIN-
Q1
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.