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BSM75GD60DLC Datasheet Preview

BSM75GD60DLC Datasheet

IGBT Module

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GD 60 DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
TC = 70° C
TC = 25 °C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, TC = 70°C
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, TVj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VISOL
600
75
95
150
330
+/- 20V
75
150
1.200
2,5
V
A
A
A
W
V
A
A
A2s
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 75A, VGE = 15V, Tvj = 25°C
IC = 75A, VGE = 15V, Tvj = 125°C
Gate-Schwellenspannung
gate threshold voltage
IC = 1,5 mA, VCE = VGE, Tvj = 25°C
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 600V, VGE = 0V, Tvj = 25°C
VCE = 600V, VGE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
VCE sat
min.
-
-
typ.
1,95
2,20
max.
2,45
-
VGE(th)
4,5
5,5
6,5
V
V
V
Cies - 3,3 - nF
Cres - 0,3 - nF
- 1 500 µA
ICES
- 1 - mA
IGES
-
- 400 nA
prepared by: Andreas Vetter
approved by: Michael Hornkamp
date of publication: 2006-01-31
revision: 3
1 (8)
BSM 75 GD 60 DLC




eupec

BSM75GD60DLC Datasheet Preview

BSM75GD60DLC Datasheet

IGBT Module

No Preview Available !

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 75 GD 60 DLC
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
IC = 75 A, VCC = 300V
VGE = ±15V, RG = 3,0 , Tvj = 25°C
VGE = ±15V, RG = 3,0 , Tvj = 125°C
IC = 75 A, VCC = 300V
VGE = ±15V, RG = 3,0 , Tvj = 25°C
VGE = ±15V, RG = 3,0 , Tvj = 125°C
IC = 75 A, VCC = 300V
VGE = ±15V, RG = 3,0 , Tvj = 25°C
VGE = ±15V, RG = 3,0 , Tvj = 125°C
IC = 75 A, VCC = 300V
VGE = ±15V, RG = 3,0 , Tvj = 25°C
VGE = ±15V, RG = 3,0 , Tvj = 125°C
IC = 75 A, VCC = 300V, VGE = 15V
RG = 3,0 , Tvj = 125°C, Lσ = 15 nH
IC = 75 A, VCC = 300V, VGE = 15V
RG = 3,0 , Tvj = 125°C, Lσ = 15 nH
tP 10µsec, VGE 15V
TVj125°C, VCC=360V, VCEmax= VCES -LσCE ·di/dt
Modul-Leitungswiderstand, Anschlüsse - Chip
lead resistance, terminals - chip
Tc= 25°C
min. typ. max.
td,on - 63 - ns
- 65 - ns
tr - 22 - ns
- 25 - ns
td,off - 155 - ns
- 170 - ns
tf - 20 - ns
- 35 - ns
Eon - 0,7 - mJ
Eoff - 2,4 - mJ
ISC
- 340 -
A
LσCE - 55 - nH
RCC'+EE'
-
4,4
- m
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
IF = 75 A, VGE = 0V, Tvj = 25°C
IF = 75 A, VGE = 0V, Tvj = 125°C
IF = 75 A, - diF/dt = 3000 A/µsec
VR = 300V, VGE = -10V, Tvj = 25°C
VR = 300V, VGE = -10V, Tvj = 125°C
IF = 75 A, - diF/dt = 3000 A/µsec
VR = 300V, VGE = -10V, Tvj = 25°C
VR = 300V, VGE = -10V, Tvj = 125°C
IF = 75 A, - diF/dt = 3000 A/µsec
VR = 300V, VGE = -10V, Tvj = 25°C
VR = 300V, VGE = -10V, Tvj = 125°C
min. typ. max.
- 1,25 1,6 V
VF
- 1,20 -
V
IRM - 95 - A
- 115 -
A
Qr - 5,1 - µC
- 7,9 - µC
Erec - - - mJ
- 2,3 - mJ
2 (8)
BSM 75 GD 60 DLC


Part Number BSM75GD60DLC
Description IGBT Module
Maker eupec
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