900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






eupec GmbH

FZ1600R12KE3 Datasheet Preview

FZ1600R12KE3 Datasheet

IGBT-Module

No Preview Available !

www.DataSheet4U.com
Technische Information / technical information
IGBT-Module
IGBT-Modules
FZ1600R12KE3
Höchstzulässige Werte / maximum rated values
vorläufige Daten
preliminary data
Elektrische Eigenschaften / electrical properties
Kollektor Emitter Sperrspannung
collector emitter voltage
Tvj= 25°C
Kollektor Dauergleichstrom
DC collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Tc= 80°C
Tc= 25°C
tp= 1ms, Tc= 80°C
Gesamt Verlustleistung
total power dissipation
Tc= 25°C;Transistor
Gate Emitter Spitzenspannung
gate emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forward current
tp= 1ms
Grenzlastintegral
I²t value
VR= 0V, tp= 10ms, Tvj= 125°C
Isolations Prüfspannung
insulation test voltage
RMS, f= 50Hz, t= 1min.
VCES
IC, nom
IC
ICRM
Ptot
VGES
IF
IFRM
I²t
VISOL
1200
1600
2300
3200
7,8
+/- 20
1600
3200
300
2,5
V
A
A
A
kW
V
A
A
k A²s
kV
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
Kollektor Emitter Sättigungsspannung
collector emitter satration voltage
IC= 1600A, VGE= 15V, Tvj= 25°C,
IC= 1600A, VGE= 15V, Tvj= 125°C,
Gate Schwellenspannung
gate threshold voltage
IC= 64mA, VCE= VGE, Tvj= 25°C,
Gateladung
gate charge
VGE= -15V...+15V;VCE= ...V
Eingangskapazität
input capacitance
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
Rückwirkungskapazität
reverse transfer capacitance
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V
Kollektor Emitter Reststrom
collector emitter cut off current
VCE=1200V, VGE= 0V, Tvj= 25°C,
Gate Emitter Reststrom
gate emitter leakage current
VCE= 0V, VGE= 20V, Tvj= 25°C
min. typ. max.
VCEsat
-
-
1,7 2,15
2 t.b.d.
VGE(th)
5
5,8 6,5
V
V
V
QG - 15,4 - µC
Cies - 115 - nF
Cres - 5,4 - nF
ICES
-
- 5 mA
IGES
-
- 400 nA
prepared by: MOD-D2; Mark Münzer
approved: SM TM; Christoph Lübke
date of publication: 2002-07-29
revision: 2.0
1 (8)
DB_FZ1600R12KE3_2.0.xls
2002-07-29




eupec GmbH

FZ1600R12KE3 Datasheet Preview

FZ1600R12KE3 Datasheet

IGBT-Module

No Preview Available !

Technische Information / technical information
IGBT-Module
IGBT-Modules
FZ1600R12KE3
vorläufige Daten
preliminary data
Charakteristische Werte / characteristic values
Transistor Wechselrichter / transistor inverter
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn on energy loss per pulse
Ausschaltverlustenergie pro Puls
turn off energy loss per pulse
Kurzschlussverhalten
SC data
IC= 1600A, VCC= 600V
VGE=±15V, RGon=1,6W, Tvj=25°C
VGE=±15V, RGon=1,6W, Tvj=125°C
IC= 1600A, VCC= 600V
VGE=±15V, RGon=1,6W, Tvj=25°C
VGE=±15V, RGon=1,6W, Tvj=125°C
IC= 1600A, VCC= 600V
VGE=±15V, RGoff=0,2W, Tvj=25°C
VGE=±15V,RGoff=0,2W, Tvj=125°C
IC= 1600A, VCC= 600V
VGE=±15V, RGoff=0,2W, Tvj=25°C
VGE=±15V, RGoff=0,2W, Tvj=125°C
IC= 1600A, VCC= 600V, Ls= 45nH
VGE=±15V, RGon=1,6W, Tvj=125°C
IC= 1600A, VCC= 600V, Ls= 45nH
VGE=±15V, RGoff=0,2W, Tvj=125°C
tP £ 10µs, VGE £ 15V, TVj £ 125°C
VCC= 900V, VCEmax= VCES - LsCE · çdi/dtç
Modulindiktivität
stray inductance module
Leitungswiderstand, Anschluss-Chip
lead resistance, terminal-chip
Tc= 25°C
min. typ. max.
td,on
- 0,60
-
µs
- 0,66 - µs
tr - 0,23 - µs
- 0,22 - µs
td,off
- 0,82
-
µs
- 0,96 - µs
tf - 0,15 - µs
- 0,18 - µs
Eon - 325 - mJ
Eoff - 250 - mJ
ISC
- 6400
-
A
LsCE - 12
- nH
RCC´/EE´
-
0,19
-
mW
Charakteristische Werte / characteristic values
Diode Wechselrichter / diode inverter
Durchlassspannung
forward voltage
IF= IC, nom, VGE= 0V, Tvj= 25°C
IF= IC, nom, VGE= 0V, Tvj= 125°C
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recoverred charge
Ausschaltenergie pro Puls
reverse recovery energy
IF=IC,nom, -diF/dt= 7200A/µs
VR= 600V, VGE= -15V, Tvj= 25°C
VR= 600V, VGE= -15V, Tvj= 125°C
IF=IC,nom, -diF/dt= 7200A/µs
VR= 600V, VGE= -15V, Tvj= 25°C
VR= 600V, VGE= -15V, Tvj= 125°C
IF=IC,nom, -diF/dt= 7200A/µs
VR= 600V, VGE= -15V, Tvj= 25°C
VR= 600V, VGE= -15V, Tvj= 125°C
- 2,2 2,8 V
VF
-2
-V
IRM
- 515
-
A
- 800
-
A
Qr - 75 - µC
- 180 - µC
Erec - 18
- 47
- mJ
- mJ
2 (8)
DB_FZ1600R12KE3_2.0.xls
2002-07-29


Part Number FZ1600R12KE3
Description IGBT-Module
Maker eupec GmbH
Total Page 9 Pages
PDF Download

FZ1600R12KE3 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 FZ1600R12KE3 IGBT-Module
eupec GmbH





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy