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eupec GmbH

FZ400R65KF1 Datasheet Preview

FZ400R65KF1 Datasheet

IGBT-Module

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 400 R 65 KF1
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj=125°C
Tvj=25°C
Tvj=-40°C
Kollektor-Dauergleichstrom
DC-collector current
TC = 80 °C
TC = 25 °C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, Tvj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Teilentladungs Aussetzspannung
partial discharge extinction voltage
RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287)
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VISOL
VISOL
6500
6300
5800
400
800
800
7,4
+/- 20V
400
800
87
10,2
5,1
V
A
A
A
kW
V
A
A
k A2s
kV
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
IC = 400A, VGE = 15V, Tvj = 25°C
IC = 400A, VGE = 15V, Tvj = 125°C
Gate-Schwellenspannung
gate threshold voltage
IC = 70mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V ... +15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 6300V, VGE = 0V, Tvj = 25°C
VCE = 6500V, VGE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
VCE sat
min.
-
-
typ.
4,3
5,3
max.
4,9
5,9
VGE(th)
6,4
7,0
8,1
V
V
V
QG - 5,6 - µC
Cies - 56 - nF
ICES
-
0,4
40
-
mA
mA
IGES
-
- 400 nA
prepared by: Dr. Oliver Schilling
approved by: Dr. Schütze 2002-07-05
date of publication: 2002-07-05
revision/Status: Series 1
1 FZ 400 R65 KF1 (final 1).xls




eupec GmbH

FZ400R65KF1 Datasheet Preview

FZ400R65KF1 Datasheet

IGBT-Module

No Preview Available !

Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 400 R 65 KF1
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
IC = 400A, VCE = 3600V
VGE = ±15V, RGon = 6,2, CGE=44nF, Tvj = 25°C,
VGE = ±15V, RGon = 6,2, CGE=44nF, Tvj = 125°C,
IC = 400A, VCE = 3600V
VGE = ±15V, RGon = 6,2, CGE=44nF, Tvj = 25°C,
VGE = ±15V, RGon = 6,2, CGE=44nF, Tvj = 125°C,
IC = 400A, VCE = 3600V
VGE = ±15V, RGoff = 36, CGE=44nF, Tvj = 25°C,
VGE = ±15V, RGoff = 36, CGE=44F, Tvj = 125°C,
IC = 400A, VCE = 3600V
VGE = ±15V, RGoff = 36, CGE=44nF, Tvj = 25°C,
VGE = ±15V, RGoff = 36, CGE=44F, Tvj = 125°C,
IC = 400A, VCE = 3600V, VGE = ±15V
RGon = 6,2, CGE=44nF, Tvj = 125°C , Lσ = 280nH
IC = 400A, VCE = 3600V, VGE = ±15V
RGoff = 36, CGE=44nF, Tvj = 125°C , Lσ = 280nH
tP 10µsec, VGE 15V, acc to appl.note 2002/05
TVj125°C, VCC=4400V, VCEmax=VCES -LσCE ·di/dt
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
min. typ. max.
td,on
- 0,75 -
µs
- 0,72 -
µs
tr
- 0,37 -
µs
- 0,40 -
µs
td,off
- 5,50 -
µs
- 6,00 -
µs
tf
- 0,40 -
µs
- 0,50 -
µs
Eon -
Eoff -
ISC
LsCE
-
-
RCC´+EE´
-
4000
-
2300
-
2000
20
-
-
0,18 -
mJ
mJ
A
nH
m
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
IF = 400A, VGE = 0V, Tvj = 25°C
IF = 400A, VGE = 0V, Tvj = 125°C
IF = 400A, - diF/dt = 1400A/µs
VR = 3600V, VGE = -10V, Tvj = 25°C
VR = 3600V, VGE = -10V, Tvj = 125°C
IF = 400A, - diF/dt = 1400A/µs
VR = 3600V, VGE = -10V, Tvj = 25°C
VR = 3600V, VGE = -10V, Tvj = 125°C
IF = 400A, - diF/dt = 1400A/µs
VR = 3600V, VGE = -10V, Tvj = 25°C
VR = 3600V, VGE = -10V, Tvj = 125°C
min. typ. max.
VF
3,0 3,8 4,6
V
3,9 4,7
V
IRM - 540 - A
- 660 -
A
Qr - 360 - µC
- 700 - µC
Erec - 440 - mJ
- 1050 -
mJ
2 FZ 400 R65 KF1 (final 1).xls


Part Number FZ400R65KF1
Description IGBT-Module
Maker eupec GmbH
Total Page 10 Pages
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