ISL71040M Description
ISL71040M Radiation Tolerant Low-Side GaN FET Driver Datasheet The ISL71040M is a low-side driver designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL71040M operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single...
ISL71040M Key Features
- Qualified to Renesas Rad Tolerant Screening and QCI Flow (R34TB0004EU)
- Wide operating voltage range of 4.5V to 13.2V
- Up to 14.7V logic inputs (regardless of VDD level)
- Inverting and non-inverting inputs
- Optimized to drive enhancement mode GaN FETs
- Internal 4.5V regulated gate drive voltage
- Independent outputs for adjustable
- NiPdAu-Ag Lead finish (Sn-free, Pb-free)
- Moisture Sensitivity Level (MSL) Rating: 1
- Passes NASA Low Outgassing Specifications