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MS4N1350B Datasheet Preview

MS4N1350B Datasheet

N-channel MOSFET

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MS4N1350 MS4N1350E
MS4N1350B MS4N1350W MS4N1350FW
N-channel 1500 V, 6 , 4 A, Power MOSFET
in TO-263,TO-247TO-220, TO-3PB, TO-3PF
Features
Type
VDSS
MS4N1350FW 1500 V
MS4N1350
1500 V
MS4N1350B 1500 V
MS4N1350E 1500 V
MS4N1350W 1500 V
RDS(on)
max.
<9
<9
<9
<9
<9
ID
PTOT
4 A 63 W
4 A 140 W
4 A 140 W
4 A 80 W
4 A 140 W
100% avalanche tested
Intrinsic capacitances and Qg minimized
High speed switching
Fully isolated TO-3PF plastic package
Creepage distance path is 5.4 mm (typ.) for
TO-3PF
Application
Switching applications
Description
MasPower has designed an advanced family of
very high voltage Power MOSFETs with
outstanding performances. The strengthened
layout coupled with the company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics.
Table 1. Device summar
Order codes
Marking
MS4N1350
MS4N1350
MS4N1350FW
MS4N1350FW
MS4N1350E
MS4N1350E
MS4N1350B
MS4N1350B
MS4N1350W
MS4N1350W
TO-220
TO-247
TO-263
TO-3PB
TO-3PF
Figure 1. Internal schematic diagram
(2)
(1)
(3)
Package
TO-3PF
TO-220
TO-263
TO-3PB
TO-247
Packaging
Tube
Tube
Tube
Tube
Tube
1/13




maspower

MS4N1350B Datasheet Preview

MS4N1350B Datasheet

N-channel MOSFET

No Preview Available !

MS4N1350, MS4N1350FW, MS4N1350B, MS4N1350W, MS4N1350E
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1) Drain current (pulsed)
PTOT
VISO
Total dissipation at TC = 25 °C
Insulation with stand voltage (RMS)
from all three leads to external heat sink
(t=1 s;TC=25 °C)
Derating factor
Tstg storage temperature
Tj Max. operating junction temperature
1. Pulse width limited by safe operating area
Value
TO-220,TO-247
TO-3PF
1500
± 30
4
2.6
10
140
4(1)
2.6 (1)
10 (1)
63
3500
1.12
0.5
-50 to 150
150
Unit
V
V
A
A
A
W
V
W/°C
°C
°C
Table 3.
Symbol
Thermal data
Parameter
Rthj-case
Rthj-amb
Tj
Thermal resistance junction-
case max
Thermal resistance junction-
ambient max
Maximum lead temperature
for soldering purpose
TO-220 TO-247 TO-263 TO-3PF
0.89
0.63
2
63.5
50
35
50
300
Table 4. Avalanche characteristics
Unit
°C/W
°C/W
°C
Symbol
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max value
Unit
4
A
450
mJ
2/13


Part Number MS4N1350B
Description N-channel MOSFET
Maker maspower
PDF Download

MS4N1350B Datasheet PDF






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