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MSG20T120FQC Datasheet Preview

MSG20T120FQC Datasheet

N-Channel IGBT

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Features
Low Gate charge
FS Technology
VCE(sat) = 1.7V @ IC = 20A
High Input Impedance
Short circuit withstand time 10 µs
MSG20T120FQC
N-Channel IGBT
Applications
PFC
UPS
Inverter
Absolute Maximum Ratings
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector curre
TC=25°C
TC=100°C
Pulsed collector current, pulse time limited by Tjmax
Diode forward current @ TC = 100°C
Diode pulsed current, Pulse time limited by Tjmax
Power dissipati
TC=25°C
TC=100°C
Operating Junction and storage temperature rang
Symbol Value Unit
VCES
VGES
1200
V
±30
40
IC
20
ICM
60
A
IF
20
IFM
120
227
PD
W
132
TJ
-55 to150
°C
Tstg
-55 to150
Thermal Characteristics
Parameter
Thermal resistance junction-to-ambien
Thermal resistance junction-to-case for IGBT
Thermal resistance junction-to-case for Diod
Symbol
RθJA
RθJC
RθJC
Value
62.5
0.55
0.65
Unit
°C/W
H1.02
Maspower
1




maspower

MSG20T120FQC Datasheet Preview

MSG20T120FQC Datasheet

N-Channel IGBT

No Preview Available !

MSG20T120FQC
N-Channel IGBT
Electrical Characteristics (Tc =25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
Static Characteristics
Collector-emitter breakdown voltag
Gate-emitter threshold voltage
BVCES
VGE(th)
IC = 500μA, VGE = 0V
VCE = VGE, IC = 250μA
1200 -
4.5
-
-
V
6.5
Zero gate voltage collector current
ICES
VCE = 1200V, VGE = 0V
-
200 μA
Gate-emitter leakage current
IGES
VGE = 20V, VCE = 0V
-
-
100 nA
IC = 20A VGE = 15V TC = 25°C
-
1.7 2.0
Collector-emitter saturation voltage VCE(sat)
V
IC = 20A, VGE = 15V, TC = 150°C -
2.0
-
Dynamic and Switching Characteristi
Total gate charg
VCE = 600V, IC = 20A,
Qg
-
115
-
nC
VGE = 15V
Reverse transfer capacitanc
Cres
-
92
-
Output capacitance
Coes
-
128
-
Turn-on delay time
td(on)
-
90
-
Rise tim
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
tr
-
75
-
td(off)
VGE = 15V, VCC = 600V,
nS
-
210
-
IC = 20A, RG = 10Ω
tf
-
100
-
,
Eon
Inductive Load, TC = 25°C
-
2.8
-
Eoff
-
1.1
-
mJ
Total switching energ
Ets
-
3.9
-
Diode Characteristics (Tc =25oC unless otherwise specified)
Forward voltag
IF=20A,TC=25
-
1.7 2.75
VF
V
IF=20A,TC=125
-
1.55
-
Reverse recovery time
trr
-
227
-
nS
IF=20A,di/dt=100A/μS
Reverse recovery current
Irr
-
4.6
-
A
TC=25
Reverse recovery charge
Qrr
- 1200 -
nC
Notes:
1Pulse width limited by maximum junction temperature
2Allowed number of short circuits: <1000; time between short circuits: >1s.
3Pulse TestPulse Width ≤300μs,Duty Cycle≤2
4Essentially independent of operating temperature
H1.02
Maspower
2


Part Number MSG20T120FQC
Description N-Channel IGBT
Maker maspower
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MSG20T120FQC Datasheet PDF






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