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MSG40T120FH - High speed Trench Fieldstop IGBT

General Description

This IGBT is produced using advanced trench fieldstop IGBT technology, which provides low V CE(sat), high switching performance and excellent quality.

Key Features

  • ▄ High Speed Switching ▄ Positive Temperature coefficient for easy paralleling ▄ High ruggedness&good thermal stability ▄ Including fast free-wheeling diode ▄ Very tight parameter distribution GC E Absolute Maximum Ratings Characteristics Symbol Collector-emitter voltage V CE Gate-emitter voltage V GE Collector current T C=25℃ T C=100℃ I C Pulsed collector current, t p limited by T jmax I CM Diode forward current @T C=100℃ IF Diode pulsed collector current, t p limited by T jmax.

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Datasheet Details

Part number MSG40T120FH
Manufacturer maspower
File Size 3.01 MB
Description High speed Trench Fieldstop IGBT
Datasheet download datasheet MSG40T120FH Datasheet

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MSG40T120FH High speed Trench Fieldstop IGBT General Description This IGBT is produced using advanced trench fieldstop IGBT technology, which provides low V CE(sat), high switching performance and excellent quality.