MSG40T65FH - 650V Field stop Trench IGBT

Key Features

Fast Switching & Low VCE[sat].
High Input Impedance.
VCE(sat) = 1.88V @ IC = 40A.
High Input Impedance.
Short circuit withstand time 10 µs MSG40T65FH 650V Field stop Trench IGBT.

MSG40T65FH 650v field stop trench igbt by maspower - Datasheet Preview

Datasheet Details

Part number	MSG40T65FH
Manufacturer	maspower
File Size	2.35 MB
Description	650V Field stop Trench IGBT
Datasheet	MSG40T65FH Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MSG43001	Transistor	Panasonic Semiconductor
MSG43004	Transistor	Panasonic Semiconductor
MSG061P03G	P-Channel Enhancement Mode MOSFET	CITC
MSG100G41	MSG100x41	ETC
MSG100J41	MSG100x41	ETC

Other Datasheets by maspower

Part Number	Description
MSG40T120FH	High speed Trench Fieldstop IGBT
MSG15T120FQC	N-Channel IGBT
MSG20T120FQC	N-Channel IGBT
MSG20T65FQC	MOSFET
MSG20T65FQS	MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Features  Fast Switching & Low VCE[sat]  High Input Impedance  VCE(sat) = 1.