10PT08G Overview
Description
The 10PT series of silicon controlled rectifiers are high performance glass passivated technology, and are designed for power supply up to 400Hz on resistive or inductive load. A K A G TO-251 (I-PAK) (10PTxxF) A A A K G TO-252 (D-PAK) (10PTxxG) K A G K A G TO-220AB (Non-lnsulated) TO-220AB (lnsulated) (10PTxxA) (10PTxxAI) 2(A) 3(G) 1(K) PARAMETER SYMBOL TEST CONDITIONS RMS on-state current full sine wave (180° conduction angle ) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing IT(RMS) IT(AV) ITSM I2t TO-251/TO-252/TO-220AB TO-220AB insulated TO-251/TO-252/TO-220AB TO-220AB insulated F =50 Hz F =60 Hz tp = 10 ms TC=100°C TC=90°C TC=100°C TC=90°C t = 20 ms t = 16.7 ms Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns Peak gate current dI/dt IGM F = 60 Hz Tp = 20 µs Tj = 125ºC Tj = 125ºC Maximum gate power Average gate power dissipation Repetitive peak off-state voltage Repetitive peak reverse voltage Storage temperature range PGM PG(AV) VDRM VRRM Tstg Tp =20µs Tj =125ºC Tj = 125ºC Tj =125ºC Operating junction temperature range Tj VALUE 10 6.4 100 105 50 50 4 10 1 600 to 1000 - 40 to + 150 - 40 to + 125 UNIT A A A A2s A/µs A W W V ºC Page 1 of 5 SEMICONDUCTOR 10PT Series RRooHHSS ELECTRICAL SPECIFICATIONS (TJ = 25 ºC, unless otherwise specified) SYMBOL TEST CONDITIONS IGT VGT VGD IH IL dV/dt VTM IDRM IRRM tq VD = 12V, RL = 30Ω VD = VDRM, RL = 3.3KΩ RGK = 220Ω, Tj = 110°C IT = 100mA, Gate open IG = 1.2 × IGT VD = 67% VDRM, Gate open, Tj = 110°C IT = 20A, tP = 380 µs VD=VDRM, VR=VRRM RGK = 220Ω VD = 67% VDRM, ITM = 12A, VR = 25V dITM = 30A/µs, dVD/dt = 50V/µs Tj = 25°C Tj = 25°C Tj = 110°C Tj = 110°C Ma.
Key Features
- Symbol IT(RMS) VDRM/VRRM IGT Value 10 600 to 1000 15 Unit A V mA
