SEMICONDUCTOR
300D(R)Series RRooHHSS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at maximum case temperature
Maximum peak, one cycle forward,
non-reptitive surge current
Maximum l²t for fusing
SYMBOL
IF(AV)
IFSM
I2t
TEST CONDITIONS
180° conduction, half sine wave
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100%VRRM
reapplied
No voltage
reapplied
100%VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
300D(R)
300
130/110
6050
6330
5080
5311
183
166
129
117
Maximum l²√t for fusing
I2√t t = 0.1 ms to 10 ms, no voltage reapplied
1830
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
VF(TO)
rF
VFM
TJ = TJ Maximum
lpk = 942A, TJ = 25°C
0.610
0.751
1.40
UNIT
A
ºC
A
kA2s
kA2√s
V
mΩ
V
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating and
storage temperature range
Maximum thermal resistace,
junction to case
TJ, Tstg
RthJC DC operation
Maximum thermal resistance
case to heatsink
Maximum allowable mounting torque
(+0% , -20%)
Approximate weight
Case style
RthCS
Mounting surface, smooth, flat and greased
Not lubricated threads
Lubricated threads
Ceramic housing
Glass-metal seal
(JEDEC) see dimensions -
link at the end of datasheet
300D(R)
04 TO 12 16 TO 20
UNIT
- 40 to175 - 40 to150 ºC
0.18
0.08
K/W
37
Nm
28
228 g
203
DO-205AB (DO-9)
RthJC CONDUCTION
CONDUCTION ANGEL SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDUCTIONS
180°
120°
90°
60°
30°
0.020
0.024
0.031
0.045
0.077
0.015
0.025
0.034
0.047
0.077
TJ = TJ maximum
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
K/W
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