Download the 6N60A datasheet PDF.
This datasheet also covers the 6N60 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
The Nell 6N60 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max.
threshold voltage of 4 volts.
Key Features
RDS(ON) = 1.5Ω@VGS = 10V Ultra low gate charge(25nC max. ) Low reverse transfer capacitance (CRSS = 10pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature
D
GDS TO-251 (I-PAK) (6N60F)
D
D
G S
TO-252 (D-PAK) (6N60G)
GDS
TO-220AB (6N60A)
GDS
TO-220F (6N60AF).
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
6N60A. For precise diagrams, and layout, please refer to the original PDF.
SEMICONDUCTOR 6N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell 6N60 is a three-terminal silicon device with curren...
View more extracted text
SCRIPTION The Nell 6N60 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. FEATURES RDS(ON) = 1.5Ω@VGS = 10V Ultra low gate charge(25nC max.
6N60A Datasheet
