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nELL

8N60AF Datasheet Preview

8N60AF Datasheet

N-Channel Power MOSFET

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SEMICONDUCTOR
8N60 Series RRooHHSS
Nell High Power Products
DESCRIPTION
N-Channel Power MOSFET
(8A, 600Volts)
The Nell 8N60 is a three-terminal silicon
device with current conduction capability of 8A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 600V ,and max.
threshold voltage of 4 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
FEATURES
RDS(ON) = 1.2Ω @ VGS = 10V
Ultra low gate charge(36nC max.)
Low reverse transfer capacitance
(CRSS = 12pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
ID (A)
8
VDSS (V)
600
RDS(ON) (Ω)
1.2 @ VGS = 10V
QG(nC) max.
36
D
GDS
TO-220AB
(8N60A)
D
G
S
TO-263(D2PAK)
(8N60H)
GDS
TO-220F
(8N60AF)
D (Drain)
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
Drain to Source voltage
Drain to Gate voltage
TJ=25°C to 150°C
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=8A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
IAS=8A, L=7.1mH
dv/dt
Peak diode recovery dv/dt(Note 3)
PD Total power dissipation
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 8A, VDD = 50V, L = 7.1mH, RGS = 25Ω, starting TJ=25°C.
3.ISD ≤ 7.5A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ=25°C.
TO-220AB/TO-263
TC=25°C
TO-220F
1.6mm from case
www.nellsemi.com
Page 1 of 7
VALUE
600
600
±30
8
5
32
8
14.7
230
4.5
150
48
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W
ºC
lbf.in (N.m)




nELL

8N60AF Datasheet Preview

8N60AF Datasheet

N-Channel Power MOSFET

No Preview Available !

SEMICONDUCTOR
8N60 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
TO-220AB/TO-263
TO-220F
TO-220AB/TO-263
TO-220F
Min.
Typ.
Max.
0.85
2.6
62.5
62.5
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
V(BR)DSS
Drain to source breakdown voltage
ID = 250µA ,VGS = 0V
600
▲ ▲V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 250µA, VDS=VGS
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
RDS(ON)
Static drain to source on-state resistance ID =4A, VGS = 10V
VGS(TH)
CISS
Gate threshold voltage
Input capacitance
VGS=VDS, ID=250μA
2
COSS
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
CRSS
Reverse transfer capacitance
td(ON)
Turn-on delay time
tr
td(OFF)
Rise time
Turn-off delay time
VDD = 300V, VGS = 10V, lD = 8A,
RGS = 25Ω (Note 1, 2)
tf Fall time
QG
QGS
QGD
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
VDD = 480V, VGS = 10V, ID = 8A
(Note 1, 2)
Typ.
0.7
1
965
105
12
16.5
60.5
81
64.5
28
4.5
12
Max. UNIT
V
10
100
100
-100
V/ºC
μA
nA
1.2
4
1255
135
Ω
V
pF
16
45
130
ns
170
140
36
nC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 8A, VGS = 0V
1.4 V
Is (IsD)
Continuous source to drain current
ISM Pulsed source current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
G
(Gate)
8
A
32
trr Reverse recovery time
Qrr Reverse recovery charge
ISD = 8A, VGS = 0V,
dIF/dt = 100A/µs
S (Source)
320 ns
2.4 µC
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
www.nellsemi.com
Page 2 of 7


Part Number 8N60AF
Description N-Channel Power MOSFET
Maker nELL
PDF Download

8N60AF Datasheet PDF






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