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D2060D Datasheet Preview

D2060D Datasheet

Standard Recovery Diode

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SEMICONDUCTOR
D2060D Series RRooHHSS
Nell High Power Products
Standard Recovery Diodes
(Hockey PUK Version), 2060A
FEATURES
Wide current range
High voltage ratings up to 4500V
High surge current capabilities
Diffused junction
Hockey PUK version
Case style DO-220AC(K-PUK),
Nell’s D-type Capsule
Lead (Pb)-free
TYPICAL APPLICATIONS
Converters
Power supplies
Machine tool controls
High power drives
Medium traction applications
DO-200AC(K-PUK)
(Nell’s D-type Capsule )
PRODUCT SUMMARY
IF(AV)
2060A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
Ths
IF(RMS)
IFSM
I2t
VRRM
TJ
Ths
50 HZ
60 HZ
50 HZ
60 HZ
Typical
VALUES
2060
55
3750
25
20000
20940
2000
1820
2600 to 4500
-40 to 150
UNIT
A
ºC
A
ºC
A
kA2s
V
ºC
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
D2060D
VOLTAGE
CODE
26
30
36
40
45
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
2600
3000
3600
4000
4500
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
lRRM, MAXIMUM
AT TJ = TJ MAXIMUM
mA
2700
3100
3700
4100
4600
70
www.nellsemi.com
Page 1 of 5




nELL

D2060D Datasheet Preview

D2060D Datasheet

Standard Recovery Diode

No Preview Available !

SEMICONDUCTOR
D2060D Series RRooHHSS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNIT
Maximum average forward current
at heatsink temperature
IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
2060(1000) A
55(85)
ºC
Maximum RMS forward current
IF(RMS) 25°C heatsink temperature double side cooled
3750
A
Maximum peak, one cycle
non-reptitive surge current
Maximum l²t for fusing
IFSM
I2t
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
50%VRRM
reapplied
No voltage
reapplied
50%VRRM
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
20000
20940
16800
17590
2000
1820
1411
1284
A
kA2s
Maximum l²t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
I2t
VF(TO)1
VF(TO)2
rt1
rt2
t = 0.1 to 10 ms, no voltage reapplied
(16.7% x π x lF(AV) < I < π x lF(AV)),TJ =TJ maximum
(I > π x lF(AV)),TJ =TJ maximum
(16.7% x π x lF(AV) < I < π x lF(AV)),TJ =TJ maximum
(I > π x lF(AV)),TJ =TJ maximum
20000
0.88
1.00
0.30
0.27
kA2s
V
mΩ
Maximum forward voltage drop
VFM
lpk = 4000A,TJ =TJ maximum,
tp = 10 ms sinusoidal wave
2.15
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating temperature range
TJ
Maximum storage temperature range
Tstg
Maximum thermal resistance, junction to heatsink
RthJ-hs
Mounting force, ±10%
Approximate weight
Case style
TEST CONDITIONS
DC operation single side cooled
DC operation double side cooled
VALUES
-40 to 150
-55 to 200
0.042
0.020
22250
(2250)
425
TO-200AC (K-PUK), Nell’s D-type Capsule
UNIT
ºC
K/W
N
(kg)
g
RthJC CONDUCTION
SINUSOIDAL CONDUCTION
CONDUCTION ANGEL
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
TEST CONDUCTIONS
180°
120°
90°
60°
30°
0.002
0.002
0.003
0.004
0.007
0.002
0.002
0.003
0.004
0.007
0.001
0.002
0.003
0.004
0.007
0.001
0.002
0.003
0.004
0.007
TJ = TJ maximum
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
UNITS
K/W
www.nellsemi.com
Page 2 of 5


Part Number D2060D
Description Standard Recovery Diode
Maker nELL
Total Page 5 Pages
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