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IRF640A - N-Channel Power MOSFET

This page provides the datasheet information for the IRF640A, a member of the IRF640 N-Channel Power MOSFET family.

Datasheet Summary

Description

The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors.

They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation.

Features

  • RDS(ON) = 0.180Ω @ VGS = 10V Ultra low gate charge(63nC max. ) Low reverse transfer capacitance (CRSS = 91pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (IRF640A) D G D S TO-263(D2PAK) (IRF640H) D (Drain).

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Datasheet Details

Part number IRF640A
Manufacturer nELL
File Size 595.59 KB
Description N-Channel Power MOSFET
Datasheet download datasheet IRF640A Datasheet
Additional preview pages of the IRF640A datasheet.

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Full PDF Text Transcription

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SEMICONDUCTOR IRF640 Series RRooHHSS DESCRIPTION Nell High Power Products N-Channel Power MOSFET (18A, 200Volts) The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators, convertors, motor drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These transistors can be operated directly from integrated circuits. FEATURES RDS(ON) = 0.180Ω @ VGS = 10V Ultra low gate charge(63nC max.
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