n-channel power mosfet.
RDS(ON) = 1.5Ω @ VGS = 10V
Ultra low gate charge(38nC Max.)
Low reverse transfer capacitance (CRSS = 68pF typical)
Fast switching capability
100% avalanche energy specifi.
such as switching regulators. convertors, UPS, switching mode power supplies and drivers for high power bipolar switchin.
The Nell IRF830 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
They are designed as an extre.
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