Nell Power Semiconductor TIP32C
Complementary Silicon Power Transistor
FEATURES
Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-220AB package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.2Vdc (MAX.) @ IC = 3A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min.) - TIP31,TIP32 = 60Vdc (Min.) - TIP31A,TIP32A = 80Vdc (Min.) - TIP31B, TIP32B = 100Vdc (Min.) - TIP31C, TIP32C DC Current Gain hFE = 25 (Min.) @ Ic = 1.0A High Current Gain - Bandwidth product fT = 3.0 MHz (Min.) @ Ic=0.5AAPPLICATIONS
Audio amplifier General purpose switching and amplifier C B C E TO-220AB C B E TIP31(NPN) C B E TIP32(PNP)ABSOLUTE MAXIMUM RATINGS
(TC = 25°C) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM IB PC Tj Tstg E Collector to base voltage (IE = 0) Collector to emitter vo