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TIP41 - Complementary Silicon Power Transistor

Key Features

  • Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-220AB package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.5Vdc (MAX. ) @ IC = 6A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min. ) - TIP41,TIP42 = 60Vdc (Min. ) - TIP41A,TIP42A = 80Vdc (Min. ) - TIP41B, TIP42B = 100Vdc (Min. ) - TIP41C, TIP42C DC Current Gain hFE = 30 (Min. ) @ Ic = 0.3A.

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Other Datasheets by Nell Power Semiconductor

Part Number Description
TIP41A Complementary Silicon Power Transistor
TIP41B Complementary Silicon Power Transistor
TIP41C Complementary Silicon Power Transistor
TIP42 Complementary Silicon Power Transistor
TIP42A Complementary Silicon Power Transistor

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TIP41 (NPN) Series TIP42 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 6A/40~100V/65W FEATURES Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-220AB package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.5Vdc (MAX.) @ IC = 6A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min.) - TIP41,TIP42 = 60Vdc (Min.) - TIP41A,TIP42A = 80Vdc (Min.) - TIP41B, TIP42B = 100Vdc (Min.) - TIP41C, TIP42C DC Current Gain hFE = 30 (Min.) @ Ic = 0.3A High Current Gain - Bandwidth product fT = 3.0 MHz (Min.) @ Ic=0.