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nELL

TIP41A Datasheet Preview

TIP41A Datasheet

Complementary Silicon Power Transistor

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SEMICONDUCTOR
TIP41 (NPN) Series
TIP42 (PNP) Series RRooHHSS
Nell High Power Products
Complementary Silicon Power Transistor
6A/40~100V/65W
FEATURES
Complementary NPN-PNP transistors
Low collector-emitter saturation voltage
Satisfactory linearity of foward current
transfer ratio hFE
TO-220AB package which can be installed
to the heat sink with one screw
Collector - Emitter Saturation Voltage:
VCE(sat) = 1.5Vdc (MAX.) @ IC = 6A
Collector - Emitter Saturation Voltage:
VCEO(sus) = 40Vdc (Min.) - TIP41,TIP42
= 60Vdc (Min.) - TIP41A,TIP42A
= 80Vdc (Min.) - TIP41B, TIP42B
= 100Vdc (Min.) - TIP41C, TIP42C
DC Current Gain hFE = 30 (Min.) @ Ic = 0.3A
High Current Gain - Bandwidth product
fT = 3.0 MHz (Min.) @ Ic=0.5A
APPLICATIONS
Audio amplifier
General purpose switching and amplifier
C
B
C E TO-220AB
C
B
E
TIP41(NPN)
C
B
E
TIP42(PNP)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
SYMBOL
PARAMETER
VCBO
Collector to base voltage (IE = 0)
TIP41
TIP42
40
VALUE
TIP41A TIP41B TIP41C
TIP42A TIP42B TIP42C
60 80 100
UNIT
VCEO
VEBO
IC
Collector to emitter voltage (IB = 0)
Emitter to base voltage (IC = 0)
Collector current
40 60 80 100 V
5
6
ICM Collector peak current (tp < 0.3mS)
10 A
IB Base current
2
PC Collector power dissipation @TC = 25°C
(Derate above 25°C)
@TA = 25°C
65 (0.52)
2.0 (0.016)
W(W/°C)
Tj Junction temperature
Tstg Storage temperature
150
-65 to 150
ºC
E Unclamped inductive load energy (Note 1)
62.5
mJ
Note: 1. This rating is based on the capability of the transistor to operate safely is a circuit of:
IC = 2.5A, L = 20mH, RBE = 100Ω, P.R.F. = 10 Hz, VCC = 10V
THERMAL CHARACTERISTICS (TC = 25°C)
SYMBOL
PARAMETER
Rth(j-c)
Maximum thermal resistance, junction to case
Rth(j-a)
Maximum thermal resistance, junction to ambient
VALUE
1.67
57
UNIT
ºC/W
ºC/W
www.nellsemi.com
Page 1 of 5




nELL

TIP41A Datasheet Preview

TIP41A Datasheet

Complementary Silicon Power Transistor

No Preview Available !

SEMICONDUCTOR
TIP41 (NPN) Series
TIP42 (PNP) Series RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
Off Characteristics
TIP41,TIP42
VCEO(SUS) Collector to emitter sustaining voltage (Note 1) lC = 30mA, IB=0
TIP41A,TIP42A
TIP41B,TIP42B
ICEO
Collector cutoff current
VCE = 30V, IB = 0
VCE = 60V, lB = 0
TIP41C,TIP42C
TIP41,TIP42
TIP41A,TIP42A
TIP41B,TIP42B
TIP41C,TIP42C
IEBO Emitter cutoff current
VEB = 5V, IC = 0
ICES
Collector cutoff current
On Characteristics
VCE = 40V, VEB = 0 TIP41,TIP42
VCE = 60V, VEB = 0 TIP41A,TIP42A
VCE = 80V, VEB = 0 TIP41B,TIP42B
VCE = 100V, VEB = 0 TIP41C,TIP42C
hFE Forward current transfer ratio (DC current gain)
VCE(sat) Collector to emitter saturation voltage (Note1)
VBE(on) Base to emitter voltage (Note1)
Dynamic Characteristics
VCE = 4V, IC = 0.3A
VCE = 4V, IC = 3A
lC = 6A, lB = 0.6A
lC = 6A, VCE = 4V
fT Current gain - Bandwidth product (note 2)
hfe Small signal current gain
Note 1. Pulsed : Pulse duration 300 µS, duty cycle ≤ 2.0%.
Note 2. fT = |hfe| • fTEST
Note 3. For PNP type voltage and current are negative.
lC = 0.5A, VCE = 10V, ftest = 1MHz
lC = 0.5A, VCE = 10V, f = 1KHz
MIN
40
60
80
100
30
15
3.0
20
MAX
0.7
1.0
400
400
400
400
75
1.5
2.0
V
mA
µA
V
MHz
www.nellsemi.com
Page 2 of 5


Part Number TIP41A
Description Complementary Silicon Power Transistor
Maker nELL
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TIP41A Datasheet PDF






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