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74AHC2G00-Q100 - Dual 2-input NAND gate

General Description

The 74AHC2G00-Q100; 74AHCT2G00-Q100 are high-speed Si-gate CMOS devices.

They provide two 2-input NAND gates.

The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.

Key Features

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1).
  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C.
  • Symmetrical output impedance.
  • High noise immunity.
  • ESD protection:.
  • MIL-STD-883, method 3015 exceeds 2000 V.
  • HBM JESD22-A114F exceeds 2000 V.
  • MM JESD22-A115-A exceeds 200 V (C = 200 pF; R = 0 Ω).
  • Low power dissipation.
  • Balanced propagation delays 3. Ordering information Tabl.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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74AHC2G00-Q100; 74AHCT2G00-Q100 Dual 2-input NAND gate Rev. 3 — 8 March 2019 Product data sheet 1. General description The 74AHC2G00-Q100; 74AHCT2G00-Q100 are high-speed Si-gate CMOS devices. They provide two 2-input NAND gates. The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V. The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications. 2.