74AHCT2G241DC
Description
The 74AHC2G241; 74AHCT2G241 is a high-speed Si-gate CMOS device.
Key Features
- Symmetrical output impedance
- High noise immunity
- ESD protection
- HBM JESD22-A114E: exceeds 2000 V
- MM JESD22-A115-A: exceeds 200 V
- CDM JESD22-C101C: exceeds 1000 V
- Low power dissipation
- Balanced propagation delays
- Specified from -40 °C to +85 °C and from -40 °C to +125 °C
