74AHCT3G14DC
Description
74AHC3G14 and 74AHCT3G14 are high-speed Si-gate CMOS devices.
Key Features
- Symmetrical output impedance
- High noise immunity
- ESD protection
- HBM JESD22-A114F exceeds 2000 V
- MM JESD22-A115-A exceeds 200 V
- CDM JESD22-C101D exceeds 1000 V
- Low power dissipation
- Balanced propagation delays
- Multiple package options
- Specified from -40 °C to +85 °C and -40 °C to +125 °C
Applications
- Wave and pulse shaper for highly noisy environment
