BAS116GW Description
Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.
BAS116GW Key Features
- High switching speed: trr = 0.8 µs
- Low leakage current: IR = 3 pA
- Repetitive peak reverse voltage VRRM ≤ 85 V
- Low capacitance: Cd = 2 pF
- Small SMD plastic package
- AEC-Q101 qualified