BAS16VY-Q Datasheet - nexperia

High-speed switching diode

* High switching speed: trr ≤ 4 ns

* Low capacitance

* Low leakage current

* Reverse voltage: VR ≤ 100 V

* Repetitive peak reverse voltage: VRRM ≤ 100 V

* Very small SMD plastic packages

* Qualified according to AEC-Q101 and recommended for use

BAS16VY-Q

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High-speed switching diode.

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BAS16VY-Q High-speed switching diode nexperia

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