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BAS16VY - High-speed switching diode

Download the BAS16VY datasheet PDF. This datasheet also covers the BAS16 variant, as both devices belong to the same high-speed switching diode family and are provided as variant models within a single manufacturer datasheet.

Description

High-speed switching diode, encapsulated in small SOT23 Surface-Mounted Device (SMD) plastic package.

2.

Features

  • High switching speed: trr ≤ 4 ns.
  • Low capacitance.
  • Low leakage current.
  • Reverse voltage: VR ≤ 100 V.
  • Repetitive peak reverse voltage: VRRM ≤ 100 V 3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BAS16-nexperia.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BAS16VY
Manufacturer Nexperia
File Size 252.63 KB
Description High-speed switching diode
Datasheet download datasheet BAS16VY Datasheet

📁 Similar Datasheet

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Other Datasheets by Nexperia

Part Number Description
BAS16VY-Q High-speed switching diode
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BAS16 High-speed switching diode
BAS16DY-Q High-speed dual switching diode
BAS16GW High-speed switching diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BAS16 High-speed switching diode 1 October 2022 Product data sheet 1. General description High-speed switching diode, encapsulated in small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance • Low leakage current • Reverse voltage: VR ≤ 100 V • Repetitive peak reverse voltage: VRRM ≤ 100 V 3. Applications • High-speed switching • General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode VR reverse voltage IR reverse current trr reverse recovery time Conditions VR = 80 V; Tamb = 25 °C IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tamb = 25 °C Min Typ Max Unit - - 100 V - - 0.5 µA - - 4 ns 5. Pinning information Table 2.
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