BAS21 Datasheet, nexperia

* High switching speed: trr ≤ 50 ns
* Low leakage current
* Reverse voltage VR ≤ 200 V
* Low capacitance: Cd ≤ 5 pF
* Small SMD plastic package 3. Ap.

* High-speed switching at high voltage
* High-voltage general-purpose switching
* Voltage clamping
* Rev.

High-voltage switching diode encapsulated in a small SOT23 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits
* High switching speed: trr ≤ 50 ns
* Low leakage current
* Reverse voltage VR ≤ 200 V
* Low capacitanc.