BAV99 - High-speed switching diodes

Nexperia

General Description

High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Key Features

High switching speed: trr ≤ 4 ns.
Low capacitance: Cd ≤ 1.5 pF.
Low leakage current.
Reverse voltage: VR ≤ 100 V.
Small SMD plastic packages 3.

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BAV99 high-speed switching diodes by Nexperia - Datasheet Preview

Datasheet Details

Part number	BAV99
Manufacturer	Nexperia
File Size	736.09 KB
Description	High-speed switching diodes
Datasheet	BAV99 Datasheet

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Other Datasheets by Nexperia

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BAV99-Q	High-speed switching diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BAV99 High-speed switching diode 1 July 2022 Product data sheet 1. General description High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 4 ns • Low capacitance: Cd ≤ 1.5 pF • Low leakage current • Reverse voltage: VR ≤ 100 V • Small SMD plastic packages 3. Applications • High-speed switching • Reverse polarity protection • General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Per diode IR reverse current VR reverse voltage trr reverse recovery time Conditions VR = 80 V; Tamb = 25 °C IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C Min Typ Max Unit - - 0.