BAV99S-Q Datasheet - nexperia

High-speed switching diode

* High switching speed: trr ≤ 4 ns

* Low capacitance: Cd ≤ 1.5 pF

* Low leakage current

* Reverse voltage: VR ≤ 100 V

* Very small SMD plastic packages

* Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Application

BAV99S-Q

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High-speed switching diode.

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