BSS84AKMB Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
BSS84AKMB Key Features
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 1 kV
- Ultra thin package profile with 0.37 mm height