Datasheet Summary
50 V, P-channel Trench MOSFET
13 July 2021
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Logic-level patible
- Side wettable flanks for optical solder inspection
- Ultra small and leadless SMD plastic package: 1.1 x 1 x 0.48 mm
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 1 kV HBM (Class H1C)
- AEC-Q101 qualified
3. Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
4. Quick reference data
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