Datasheet4U Logo Datasheet4U.com

BUK6607-55C - N-channel MOSFET

Description

Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

Features

  • AEC Q101 compliant.
  • Suitable for standard and logic level gate drives.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

📥 Download Datasheet

📁 Similar Datasheet

  • BUK6607-55C - N-Channel MOSFET (NXP Semiconductors)
  • BUK6607-75C - N-channel TrenchMOS FET (NXP Semiconductors)
  • BUK6610-75C - N-channel TrenchMOS FET (NXP Semiconductors)
  • BUK661R6-30C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK661R8-30C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK661R9-40C - N-Channel MOSFET (NXP Semiconductors)
  • BUK662R4-40C - N-channel TrenchMOS FET (NXP Semiconductors)
  • BUK662R5-30C - N-channel TrenchMOS intermediate level FET (NXP)
  • BUK662R7-55C - N-Channel MOSFET (NXP Semiconductors)
  • BUK663R2-40C - N-channel TrenchMOS intermediate level FET (NXP Semiconductors)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
BUK6607-55C N-channel TrenchMOS logic and standard level FET Rev. 1 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for standard and logic level gate drives „ Suitable for thermally demanding environments due to 175 °C rating 1.
Published: |