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BUK7610-100B - N-channel MOSFET

Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

  • Low conduction losses due to low on-state resistance.
  • Q101 compliant.
  • Suitable for standard level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Full PDF Text Transcription

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BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits • Low conduction losses due to low on-state resistance • Q101 compliant • Suitable for standard level gate drive sources • Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications • 12 V, 24 V and 42 V loads • Automotive systems • General purpose power switching • Motors, lamps and solenoids 1.4 Quick reference data Table 1.
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