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BUK7M4R3-40H Datasheet Preview

BUK7M4R3-40H Datasheet

N-channel MOSFET

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BUK7M4R3-40H
N-channel 40 V, 4.3 mΩ standard level MOSFET in LFPAK33
13 March 2020
Product data sheet
1. General description
Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9
TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high
performance automotive applications.
2. Features and benefits
Fully automotive qualified to AEC-Q101 at 175 °C
Trench 9 superjunction technology:
Low power losses, high power density
LFPAK copper clip package technology:
High robustness and reliability
Gull wing leads for high manufacturability and AOI
Repetitive avalanche rated
3. Applications
12 V automotive systems
Powertrain, chassis, body and infotainment applications
Medium/Low power motor drive
DC-DC systems
LED lighting
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
Source-drain diode
Qr recovered charge
Conditions
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
Tmb = 25 °C; Fig. 1
[1]
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 11
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 13; Fig. 14
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V
Min Typ Max Unit
- - 40 V
- - 95 A
- - 90 W
2.4 3.5 4.3 mΩ
- 5 10 nC
- 20 - nC




nexperia

BUK7M4R3-40H Datasheet Preview

BUK7M4R3-40H Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
BUK7M4R3-40H
N-channel 40 V, 4.3 mΩ standard level MOSFET in LFPAK33
Symbol
S
Parameter
softness factor
Conditions
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C; Fig. 17
Min Typ Max Unit
- 0.66 -
[1] 95A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1S
source
2S
source
3S
source
4G
gate
mb D
Mounting base; connected
to drain
1234
LFPAK33 (SOT1210)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK7M4R3-40H
LFPAK33
Description
Plastic, single ended surface mounted package (LFPAK33); 8
leads; 0.65 mm pitch
Version
SOT1210
7. Marking
Table 4. Marking codes
Type number
BUK7M4R3-40H
Marking code
74H340
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VGS
Ptot
ID
IDM
Tstg
Tj
Parameter
Conditions
Min Max Unit
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
- 40 V
gate-source voltage
DC; Tj = 175 °C
-10 20
V
total power dissipation Tmb = 25 °C; Fig. 1
- 90 W
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
[1] -
95 A
VGS = 10 V; Tmb = 100 °C; Fig. 2
- 69 A
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
- 392 A
storage temperature
-55 175 °C
junction temperature
-55 175 °C
BUK7M4R3-40H
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 March 2020
© Nexperia B.V. 2020. All rights reserved
2 / 13


Part Number BUK7M4R3-40H
Description N-channel MOSFET
Maker nexperia
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