BUK7Y07-30B fet equivalent, n-channel trenchmos standard level fet.
* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suitable for standard level gate drive sources
* Suitable for thermally demandi.
1.2 Features and benefits
* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suita.
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in aut.
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