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NX3008CBKS
30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
Rev. 1 — 29 July 2011
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage Very fast switching Trench MOSFET technology
ESD protection up to 2 kV AEC-Q101 qualified
1.3 Applications
Level shifter Power supply converter
Load switch Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
TR2 (P-channel)
VDS drain-source voltage VGS gate-source voltage ID drain current TR1 (N-channel)
Tj = 25 °C VGS = -4.
NX3008CBKS Datasheet
