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NX3008NBKMB - N-channel MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Very fast switching.
  • Low threshold voltage.
  • Trench MOSFET technology.
  • ESD protection up to 2 kV.
  • Ultra thin package profile with 0.37 mm height 3.

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Datasheet Details

Part number NX3008NBKMB
Manufacturer nexperia
File Size 254.55 KB
Description N-channel MOSFET
Datasheet download datasheet NX3008NBKMB Datasheet
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NX3008NBKMB 30 V, single N-channel Trench MOSFET 5 November 2022 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Low threshold voltage • Trench MOSFET technology • ESD protection up to 2 kV • Ultra thin package profile with 0.37 mm height 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.
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