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PB5350 - 3A PNP low VCEsat transistor

Description

PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

2.

Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High energy efficiency due to less heat generation 3.

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Datasheet Details

Part number PB5350
Manufacturer Nexperia
File Size 306.78 KB
Description 3A PNP low VCEsat transistor
Datasheet download datasheet PB5350 Datasheet

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Full PDF Text Transcription

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PBSS5350Z 50 V, 3 A PNP low VCEsat transistor 12 October 2023 Product data sheet 1. General description PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • High energy efficiency due to less heat generation 3. Applications • DC/DC converters • Supply line switching • Battery charger • LED backlighting • Linear voltage regulation (LDO) • Driver in low supply voltage applications, e.g. lamps, LEDs • Inductive load driver (for example relays, buzzers, motors) 4. Quick reference data Table 1.
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