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PBRN113ES - NPN RET

Download the PBRN113ES datasheet PDF. This datasheet also covers the PBRN113E variant, as both devices belong to the same npn ret family and are provided as variant models within a single manufacturer datasheet.

General Description

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages.

Table 1.

Key Features

  • I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PBRN113E-nexperia.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Nexperia

Part Number Description
PBRN113E NPN RET
PBRN113EK NPN RET
PBRN113ET NPN RET
PBRN113Z NPN RET
PBRN113ZK NPN RET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ Rev. 01 — 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package Nexperia PBRN113EK SOT346 PBRN113ES[1] SOT54 PBRN113ET SOT23 JEITA SC-59A SC-43A - [1] Also available in SOT54A and SOT54 variant packages (see Section 2). JEDEC TO-236 TO-92 TO-236AB 1.2 Features I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.