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PBRN123Y - NPN transistor

Description

800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages.

Table 1.

Features

  • I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.3.

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Full PDF Text Transcription

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PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1. Product overview Type number Package Nexperia PBRN123YK SOT346 PBRN123YS[1] SOT54 PBRN123YT SOT23 JEITA SC-59A SC-43A - [1] Also available in SOT54A and SOT54 variant packages (see Section 2). JEDEC TO-236 TO-92 TO-236AB 1.
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