* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* AEC-Q101 qualified
* Smaller required Printed-Ci
PBSS4021NT Datasheet (161.72 KB)
PBSS4021NT
161.72 KB
Npn transistor.
PBSS4021NT 20 V, 4.3 A NPN low VCEsat (BISS) transistor Rev. 01 31 January 2010 Product data sheet 1. Product profile 1.1 General descrip.
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