* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* AEC-Q101 qualified
* Smaller required Printed-Ci
PBSS4021PT Datasheet (161.54 KB)
PBSS4021PT
161.54 KB
Pnp transistor.
PBSS4021PT 20 V, 3.5 A PNP low VCEsat (BISS) transistor Rev. 01 29 January 2010 Product data sheet 1. Product profile 1.1 General descrip.
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