* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* AEC-Q101 qualified
* Smaller required Printed-Ci
PBSS4021PZ Datasheet (706.88 KB)
PBSS4021PZ
706.88 KB
Pnp transistor.
PBSS4021PZ 20 V, 6.6 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General descripti.
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