Datasheet4U Logo Datasheet4U.com

PBSS4021SN - NPN/NPN Transistor

Description

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

Table 1.

Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

📥 Download Datasheet

Datasheet preview – PBSS4021SN

Datasheet Details

Part number PBSS4021SN
Manufacturer nexperia
File Size 770.21 KB
Description NPN/NPN Transistor
Datasheet download datasheet PBSS4021SN Datasheet
Additional preview pages of the PBSS4021SN datasheet.

📁 Similar Datasheet

  • PBSS4021NX - 7 A PNP low VCEsat (BISS) transistor (NXP)
  • PBSS4021NZ - 8 A NPN low VCEsat (BISS) transistor (NXP)
  • PBSS4021PX - 6.2 A PNP low VCEsat (BISS) transistor (NXP)
  • PBSS4021PZ - 6.6 A PNP low VCEsat (BISS) transistor (NXP)
  • PBSS4032ND - 3.5A NPN low VCEsat (BISS) transistor (NXP Semiconductors)
  • PBSS4032NT - 2.6A NPN low VCEsat (BISS) transistor (NXP Semiconductors)
  • PBSS4032NX - 4.7 A NPN low VCEsat (BISS) transistor (NXP)
  • PBSS4032PD - 2.7A PNP low VCEsat (BISS) transistor (NXP Semiconductors)
  • PBSS4032PT - 2.4A PNP low VCEsat (BISS) transistor (NXP Semiconductors)
  • PBSS4032PX - 4.2 A PNP low VCEsat (BISS) transistor (NXP)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PBSS4021SN 20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistor Rev. 2 — 11 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia PBSS4021SN SOT96-1 Name SO8 PNP/PNP complement PBSS4021SP NPN/PNP complement PBSS4021SPN 1.2 Features and benefits „ Very low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.
Published: |