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PBSS4240Z - 2A NPN low VCEsat (BISS) transistor

General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High energy efficiency due to less heat generation.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number PBSS4240Z
Manufacturer Nexperia
File Size 691.40 KB
Description 2A NPN low VCEsat (BISS) transistor
Datasheet download datasheet PBSS4240Z Datasheet

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Full PDF Text Transcription (Reference)

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PBSS4240Z 40 V, 2 A NPN low VCEsat (BISS) transistor 16 October 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High energy efficiency due to less heat generation • AEC-Q101 qualified 3. Applications • DC-to-DC conversion • Supply line switching • Battery charger • LCD backlighting • Driver in low supply voltage applications (e.g. lamps and LEDs) • Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1.